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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Effect of diamond nucleation process on propagation losses of AlN/diamond SAW filter
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Effect of diamond nucleation process on propagation losses of AlN/diamond SAW filter

机译:金刚石成核工艺对AlN /金刚石表面声波滤波器传播损耗的影响

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摘要

In this work, the effect of a diamond nucleation process on freestanding aluminium nitride (AlN)/diamond surface acoustic wave (SAW) device performances was studied. Before diamond deposition, silicon (Si) substrates have been mechanically nucleated, using an ultrasonic vibration table with submicron diamond slurry, and bias-enhanced nucleated (BEN). Freestanding diamond layers obtained on mechanically scratched Si substrates exhibit a surface roughness of RMS=13 nm, whereas very low surface roughness (as low as RMS≤1 nm) can be achieved on a freestanding BEN diamond layer. Propagation losses have been measured as a function of the operating frequency for the two nucleation techniques. Dispersion curves of phase velocities and electromechanical coupling coefficient (K2) were determined experimentally and by calculation as a function of normalized thickness AlN film (khAlN=2ΠhAlN/Λ). Experimental results show that the propagation losses strongly depend on the nucleation technique, and that these losses are weakly increased with frequency when the BEN technique is used.
机译:在这项工作中,研究了金刚石成核工艺对独立式氮化铝(AlN)/金刚石表面声波(SAW)器件性能的影响。在金刚石沉积之前,已使用具有亚微米级金刚石浆料的超声振动台对硅(Si)基板进行了机械成核,并进行了偏斜增强成核(BEN)。在机械刮擦的Si基板上获得的独立式金刚石层的表面粗糙度为RMS = 13 nm,而在独立式BEN金刚石层上可获得非常低的表面粗糙度(低至RMS≤1 nm)。已经测量了两种成核技术的传播损耗与工作频率的函数关系。实验确定了相速度和机电耦合系数(K2)的色散曲线,并通过计算确定了归一化厚度AlN薄膜(khAlN =2ΠhAlN/Λ)的函数。实验结果表明,传播损耗在很大程度上取决于成核技术,并且当使用BEN技术时,这些损耗随频率微弱地增加。

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