A new gas circulation RIE

摘要

A new gas circulation RIE has been developed. It pumps thenexhausted gas still containing usable process gas into the RIE processnchamber to be reused. This new gas circulation RIE showed performancesnof etch rate, selectivity, etching profile, and uniformity in C4nF8/CO/Ar SiO2 etching process comparable tonthose for the conventional process with 50% less C4F8n and 80% less CO and Ar of the original input gas flow rates. Itnalso decreased PFC emission by two thirds less in CO2nconversion. This new gas circulation RIE is effective for thensuppression of the greenhouse effect and etching process cost