...
首页> 外文期刊>IEEE Transactions on Semiconductor Manufacturing >Effective and environmentally friendly remover for photo resist and ashing residue for use in Cu/low-k process
【24h】

Effective and environmentally friendly remover for photo resist and ashing residue for use in Cu/low-k process

机译:有效和环保的去除剂,用于铜/低k工艺中的光刻胶和灰化残留物

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

The authors have developed an effective removal solvent for photo resist and its ashing residue for use in copper wire/low-dielectric interlayer devices that significantly lowers the risk of harming the environment. The inhibition of Cu corrosion is very important in these devices, and benzotriazole (BTA, C6H5N3) is usually used as the corrosion inhibitor. However, BTA creates mutagenicity and biodegrades poorly. The authors investigate several typical heterocyclic nitrogen compounds as Cu inhibitors to replace BTA and study their optimum compositions. It has been found that uric acid (C5H4N4O3) is the best corrosion inhibitor for Cu. Moreover, this remover, which was composed mainly of amino alcohol, uric acid, and H2O, can be applied to low-k films by optimizing its H2O ratio. It not only effectively removed the ashing residue on Cu/low-k devices but also effectively reduced the environmental impact because the rinse wastewater containing remover can be completely treated at the fabrication site with ordinary biological processes.
机译:作者已经开发出一种有效的光刻胶去除剂及其灰化残留物,可用于铜线/低介电层间器件中,从而大大降低了危害环境的风险。在这些设备中,抑制铜腐蚀非常重要,通常使用苯并三唑(BTA,C6H5N3)作为腐蚀抑制剂。但是,BTA会引起诱变,并且生物降解性很差。作者研究了几种典型的杂环氮化合物作为铜抑制剂来替代BTA,并研究了它们的最佳组成。已经发现,尿酸(C5H4N4O3)是铜的最佳腐蚀抑制剂。而且,该去除剂主要由氨基醇,尿酸和H2O组成,可通过优化其H2O比例将其应用于低k膜。它不仅可以有效地去除Cu / low-k器件上的灰化残留物,而且还可以有效地减少对环境的影响,因为含去除剂的冲洗废水可以在制造现场通过常规生物工艺进行完全处理。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号