首页> 外文期刊>IEEE Transactions on Semiconductor Manufacturing >Transient Thermoelastic Response of Nanofilms Under Radiation Heating From Pulsed Laser-Induced Plasma
【24h】

Transient Thermoelastic Response of Nanofilms Under Radiation Heating From Pulsed Laser-Induced Plasma

机译:脉冲激光诱导等离子体辐射加热下纳米膜的瞬态热弹性响应

获取原文
获取原文并翻译 | 示例
       

摘要

Measuring transient surface temperatures of substrates excited by nanosecond impulsive-type thermal sources is a nontrivial problem due to limited response times of many current sensors and the thinness of thermal skin at the nanosecond-time scale. An indirect transient surface temperature measurement technique for nanofilms subjected to a nanosecond dynamic loading is presented and demonstrated. The intensity profile calibrated based on the plasma radiation energy measurements is used as a boundary condition for finite-element analysis to estimate the transient surface temperature and the stress tensor induced in a 100-nm chromium film bonded to a quartz substrate due to the thermal radiation heating of the laser-induced plasma. The current approach is useful for predicting the damage threshold of nanofilms in laser-induced plasma (LIP) particle cleaning, as the direct and indirect transient temperature measurements currently available are unreliable for nanosecond impulsive thermal excitations. Particle cleaning techniques based on LIP have been under development for damage-free removal of sub-100-nm particles. The plasma core formed in this cleaning approach is a source of nanosecond-range impulsive radiation and subsequent thermomechanical excitation of the substrate and, consequently, possible substrate damage. The transient temperature measurements are used to estimate the peak surface temperature and the thermomechanical stresses induced in the substrate.
机译:由于许多电流传感器的响应时间有限以及纳秒级的热皮厚度,测量由纳秒脉冲型热源激发的基板的瞬态表面温度是一个不小的问题。提出并证明了一种用于承受纳秒动态载荷的纳米薄膜的间接瞬态表面温度测量技术。基于等离子辐射能量测量结果校准的强度分布用作有限元分析的边界条件,以估算瞬态表面温度和在100 nm铬膜中由于热辐射而引起的应力张量。加热激光诱导的等离子体。当前的方法可用于预测激光诱导等离子体(LIP)颗粒清洁过程中纳米膜的损伤阈值,因为当前可用的直接和间接瞬态温度测量对于纳秒脉冲热激发而言并不可靠。正在开发基于LIP的颗粒清洁技术,以无损伤地去除100 nm以下的颗粒。在这种清洁方法中形成的等离子体核心是纳秒级脉冲辐射的源,以及随后对基板的热机械激发,因此可能损坏基板。瞬态温度测量用于估计峰值表面温度和在基板中引起的热机械应力。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号