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首页> 外文期刊>IEEE Transactions on Semiconductor Manufacturing >Modeling Spin Coating Over Topography and Uniformity Improvements Through Fill Patterns for Advanced Packaging Technologies
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Modeling Spin Coating Over Topography and Uniformity Improvements Through Fill Patterns for Advanced Packaging Technologies

机译:通过高级包装技术的填充图案,对形貌上的旋涂进行建模,并通过填充图案改善均匀性

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摘要

An empirical model is proposed for predicting surface variations following dielectric spin coating as applied to existing underlying topography in redistribution layer fabrication. Test structures that represent a wide range of underlying feature widths, spacings, and heights are designed and fabricated. These are coated with multiple thicknesses of polyimide, and their surfaces are profiled and analyzed. An empirical model based on spatial filtering over underlying features is developed, with model parameters fit to coatings over a single feature for each set of process parameters. The model predicts post-coating thicknesses at the chip-scale. Comparisons between predictions and experimental results show an RMS error of 4.4% of the feature heights when averaged over each region profiled. Finally, fill patterns are designed and new test structures are simulated using these patterns. Simulation results suggest that global variations can be substantially reduced using such fill patterns, and these results are confirmed experimentally.
机译:提出了用于预测介电旋涂后的表面变化的经验模型,该模型应用于重新分布层制造中现有的基础形貌。设计并制造了代表各种基础特征宽度,间距和高度的测试结构。这些表面涂有多种厚度的聚酰亚胺,并对其表面进行了轮廓分析。建立了基于对基础特征进行空间过滤的经验模型,对于每个工艺参数集,模型参数都适合单个特征上的涂层。该模型可以预测芯片级的涂层后厚度。预测结果与实验结果之间的比较显示,当对每个轮廓区域进行平均时,RMS误差为特征高度的4.4%。最后,设计填充图案,并使用这些图案模拟新的测试结构。仿真结果表明,使用这种填充模式可以大大减少全局变化,并且这些结果在实验上得到了证实。

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