Performance evaluation of high-power GaAs Schottky and siliconp-i-n rectifiers in hard- and soft-switching applications

摘要

The dynamic switching characteristics of high-power GaAs Schottkynand silicon p-i-n rectifiers are studied at various temperatures.nDevices were first characterized to measure forward and reverse I-V,nC-V, reverse breakdown voltage, and reverse-recovery performance. Thensame devices were characterized for turn on and turn off in switchingncircuits designed to study the dynamic switching performances undernhard- and soft-switching conditions at different temperatures. Advancedntwo-dimensional (2-D) mixed device and circuit simulations were used tonstudy the internal plasma dynamics under boundary conditions imposed bynthe circuit operation. It is shown that for hard-switching applications,nGaAs Schottky power rectifiers exhibit significantly reduced switchingnpower losses compared to silicon p-i-n rectifiers. For soft-switchingnapplications, there is not a significant difference in the switchingnpower losses for these two devices. Diode performance at elevatedntemperatures is measured and simulated, and temperature dependencies ofnswitching and conduction power losses are analyzed