A review of IGBT models

摘要

In this paper, insulated gate bipolar transistor (IGBT) modelsnpublished in the literature are reviewed, analyzed, compared andnclassified into different categories according to mathematical type,nobjectives, complexity, accuracy and speed. Features of the differentnmodels are listed. Different modeling criteria are discussed accordingnto various circuit conditions, structures, thermal considerations andnaccuracies. Some problems and trends in IGBT modeling arendiscussed