Single-Event Burnout Hardened Structure of Power UMOSFETs With Schottky Source

摘要

This paper investigates the single-event burnout (SEB) simulation results for both the standard and hardened structure of power U-shape gate MOSFETs (UMOSFETs). The Schottky source is proposed to reduce the work of the parasitic bipolar transistor inherent to the device. The hardened structure of power UMOSFETs with the Schottky source and N buffer layer is given, which can work normally and improve the SEB performance effectively. Both 70- and 120-V power MOSFETs are simulated and discussed in this paper. The SEB threshold voltages are increased to more than 94 percent of the breakdown voltages for both 70- and 120-V hardened structure, compared to 54 percent for standard power UMOSFETs.