Laser simulation of single-particle effects

摘要

The authors examine laser simulation of single-particle effects in some detail, investigating the effects of doping density and charge collection depth on funneling and charge collection, and accounting for the spreading of the focused laser beam within the silicon material. Calculations using the device simulation code PISCES are compared for heavy ions and lasers to investigate the accuracy of laser simulation of single-particle effects. Experimental charge collection measurements with heavy ions are used to establish the accuracy of the PISCES simulations.