A simple approach to SEU cross section evaluation [semiconductor memories]

Miroshkin V.V.; Tverskoy M.G.

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A simple approach to SEU cross section evaluation [semiconductor memories]

机译：一种简单的SEU横截面评估方法[半导体存储器]

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The simplified method for determination of proton induced SEU cross section is presented. The method is based on results of the analysis of experimental SEU cross sections initiated by fast nucleons. The possibility of SEU cross section measurement at single proton energy for SEU rate prediction is shown.

机译：介绍了确定质子诱导的SEU截面的简化方法。该方法基于快速核子引发的实验性SEU截面的分析结果。显示了在单个质子能量下测量SEU截面以进行SEU速率预测的可能性。

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《IEEE Transactions on Nuclear Science 》 |1998年第6期| P.2884-2890| 共7页
作者
Miroshkin V.V.; Tverskoy M.G.;
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正文语种 eng
中图分类原子能技术 ;
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A simple approach to SEU cross section evaluation [semiconductor memories]

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