Factors determining the damage coefficients and the low-frequency noise in MeV proton-irradiated silicon diodes

摘要

In this paper, the factors determining the reverse current and the recombination lifetime damage coefficients in high-energy proton-irradiated Si junction diodes are studied. These factors are: the particle energy, the crystal growth technique and corresponding starting material quality, and the substrate doping density and type. The observed macroscopic device degradation is discussed in view of the microscopic damage factor, the nonionizing energy loss (NIEL). Finally, the impact of proton irradiation on the low-frequency noise in forward operation is reported. Several experimental factors lead to the conclusion that the change in the flicker noise is related to the created ionization damage in the lateral oxide isolation at the periphery of the diode rather than to the bulk displacement damage.