Evaluation of ELDRS Mechanisms Using Dose Rate Switching Experiments on Gated Lateral PNP Transistors

摘要

The switched dose rate technique has been proposed as an accelerated test technique for enhanced low-dose-rate sensitivity. The physical mechanisms at play when this technique is applied are investigated in this paper. The variation of ${rm N}_{rm ot}$ and ${rm N}_{rm it}$ is characterized using gated lateral pnp transistors to understand the kinetics of device degradation related to differences in mechanisms between high dose rate and low dose rate irradiations.