Study of Different Cool Down Schemes During the Crystal Growth of Detector Grade CdZnTe

摘要

${rm Cd}_{0.9}{rm Zn}_{0.1}{rm Te}$ crystals were grown using a modified vertical Bridgman growth technique to produce radiation detector grade material. Motivated by the importance of the retrograde solubility problem in II-VI compound semiconductors, particularly CZT, different cool down techniques were used to observe the effects on the secondary phase (SP) size, distribution, density and resulting detector properties. Presented are four of the cool down schemes performed and the results in terms of the secondary phases and charge transport characteristics of the grown crystals. The cooling of the grown ingot to ambient temperatures was done over various lengths of time. The differences between the cool down methods are in the rates of cooling through the retrograde solubility phase. Apart from these cool downs, quenching studies were also performed on some crystal growths giving unique results in terms of the secondary phase distribution and characteristics as radiation detectors.