...
机译:辐射诱导的电阻变化和
Sandia National Laboratories, Albuquerque, NM, USA;
Electrical resistance measurement; Memristors; Radiation effects; Resistance; Displacement damage; Nanoimplanter; RRAM; memristor; microbeam; radiation effects; resistive memory; tantalum;
机译:锥形金属挡板
机译:
机译:连续-
机译:基础抵置的耐受性来自Terzaghi的公式的抵抗力达到离心机测试的评估
机译:A 265 V <公式甲型键=“内联”>