A Detailed Study on Zero-Bias Irradiation Responses of src='/images/tex/38446.gif' alt='hbox {La}_{text{2}}hbox {O}_{text{3}}'> MOS Capacitors

摘要

as a possible dielectric layer for a capacitor in MOS-based radiation sensors has been investigated under gamma irradiation doses up to 64 Gray. Capacitance–Voltage (C–V) and Conductance–Voltage () characteristics including the series resistance () of the device have been studied. The thin-film crystal structures, phase identification, and the elemental compositions of the films were investigated by X-ray diffractometer and energy-dispersive X-ray spectroscopies. The density of the interface states () and fading characteristics were calculated following a series correlations to C–V and measurements. A desired linear flat band voltage shift-dose relation was obtained using the capacitance measurements. We observed that barely decreases as irradiation dose increases, which has a crucial effects mainly on conductance of the device characteristics. features were improved with irradiation doses but still in the order of . This did not cause any significant device degradation through its operation. Finally, the fading values of the devices with layers were found to be close to that of conventional layers. The outcomes suggest that may be a promising future gate dielectric material candidate for radiation sensors in given radiation dose range.