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机译:20 nm电荷泵锁相环(PLL)中的持久性激光诱导泄漏
Vanderbilt University, Nashville, TN, USA;
University of Tennessee, Chattanooga, TN, USA;
Vanderbilt University, Nashville, TN, USA;
Vanderbilt University, Nashville, TN, USA;
Vanderbilt University, Nashville, TN, USA;
Vanderbilt University, Nashville, TN, USA;
Vanderbilt University, Nashville, TN, USA;
Vanderbilt University, Nashville, TN, USA;
Vanderbilt University, Nashville, TN, USA;
Naval Research Laboratory, Washington, DC, USA;
Vanderbilt University, Nashville, TN, USA;
Vanderbilt University, Nashville, TN, USA;
Phase locked loops; Lasers; Resistance; Charge pumps; Transistors; Degradation; Integrated circuit modeling;
机译:130 nm PD-SOI技术制造的耐辐射电荷泵锁相环的单事件瞬态表征
机译:采用65 nm CMOS技术的漏电流循环锁相环
机译:在130 nm CMOS中制造的21 GHz 8模数预分频器和20 GHz锁相环
机译:完全集成的锁相环,采用65nm CMOS技术进行漏电流补偿
机译:电荷泵锁相环的片上特性。
机译:基于单轴磁力计信号锁相环的自旋弹弹侧倾角实时估计
机译:集成电荷泵锁相环,带sC环路滤波器,用于电容式微传感器读数
机译:350 mHz双极单片pLL(锁相环)