...
机译:高性能High-
Electron. & Inf. Technol. Lab., French Atomic Energy Comm. (CEA LETI) Minatec, Grenoble;
CMOS integrated circuits; MOSFET; dielectric devices; permittivity; OFF-state currents; high-K dielectrics; high-performance drive currents; self-aligned gate-all-around CMOS devices; voltage 1.2 V; emphasis emphasistype="smcaps"mosfet/emphasis; Double-gate device; gate-all-around (GAA) device; ring oscillator (RO);
机译:Ba <分子式
机译:Sm的磁致伸缩<分子式
机译:增强高
机译:
机译:A 265 V <公式甲型键=“内联”>