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机译:下一代低功耗和高速MRAM应用的压控磁各向异性效应的建模和探索
Fert Beijing Institute, BDBC, and the School of Computer Science and Engineering, Beihang Univeristy, Beijing, China;
Fert Beijing Institute, BDBC, and the School of Electronic and Information Engineering, Beihang Univeristy, Beijing, China;
Fert Beijing Institute, BDBC, and the School of Electronic and Information Engineering, Beihang Univeristy, Beijing, China;
Fert Beijing Institute, BDBC, and the School of Computer Science and Engineering, Beihang Univeristy, Beijing, China;
Fert Beijing Institute, BDBC, and the School of Electronic and Information Engineering, Beihang Univeristy, Beijing, China;
Magnetic tunneling; Magnetization; Mathematical model; Switches; Magnetic anisotropy; Energy barrier; Thermal stability;
机译:电压控制磁各向异性效应的最新进展及发展电压转矩MRAM面临的挑战
机译:电压控制磁各向异性效应的最新进展及发展电压转矩MRAM面临的挑战
机译:具有自旋转移转矩和压控磁各向异性效应的高性能MRAM
机译:Ir和W掺杂改善垂直磁各向异性和压控磁各向异性效应
机译:用于STT-MRAM应用的具有高垂直磁各向异性的L10级薄膜。
机译:电压控制磁各向异性效应的最新进展及发展电压转矩MRAM面临的挑战
机译:电压控制磁各向异性效应的最新进展以及开发电压转矩MRAM面临的挑战