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State-Space Integral-Equation Method for the S-Domain Modeling of Planar Circuits on Semiconducting Substrates

机译:半导体衬底上平面电路S域建模的状态空间积分方程方法

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摘要

This paper presents a new and very efficient integral method for the electromagnetic modeling of planar circuits on multilayered semiconducting substrates. Differently from standard integral approaches, the method leads to a state-space model of the circuit. This model directly permits to find the admittance matrix in the form of a reduced-order pole expansion in the S-domain through standard Krylov sub-space techniques. Three examples demonstrate the really good performances of the method in terms of accuracy and rapidity.
机译:本文提出了一种用于多层半导体衬底上的平面电路电磁建模的非常有效的新方法。与标准积分方法不同,该方法可得出电路的状态空间模型。该模型直接允许通过标准Krylov子空间技术在S域中以降阶极扩展的形式找到导纳矩阵。三个例子说明了该方法在准确性和快速性方面的真正出色性能。

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