Method for preparing a monocrystalline layer, consisting of a first semiconducting material, on a substrate composed of a different-type second semiconducting material, and use of the arrangement for fabricating optoelectronic integrated circuits

摘要

In order to prepare a monocrystallline layer (3), consisting of a first semiconducting material, e.g. silicon, on a substrate (1) of a different type of second semiconductor material, e.g. of an AIIIBV compound, the layer (3) of the first semiconductor material is first applied in amorphous or polycrystalline form to the substrate (1) and is then transformed, with the aid of a lateral recrystallisation process, e.g. by laser light (4), into a monocrystalline layer (3). In this process, the substrate (1) may contain patterns of insulating material (2), e.g. insulation oxides (2) for separating (segregating) the active components. The method is suitable for fabricating optoelectronic integrated circuits on the basis of AIIIBV compounds in combination with silicon. IMAGE