Millimeter-wave InP lateral transferred-electron oscillators

摘要

A lateral InP transferred-electron device (TED) designed with a high-resistivity notch adjacent to the cathode contact is presented, and its application to millimeter-wave monolithic integrated circuits is demonstrated. At 29.9 GHz, a CW power output of 29.1 mW with a conversion efficiency of 6.7% has been obtained from cavity-tuned discrete devices. This result represents the highest power output and efficiency of a lateral TED in this frequency range. The lateral devices also had a CW power output of 0.4 mW at 98.5 GHz and 0.9 mW at 75.2 GHz. A 79.9-GHz monolithic oscillator incorporating the lateral TED is reported. Experimental and theoretical results which further the understanding of the lateral device operation are presented.