Comments on 'GaAs dual-gate FET for operation up to K-band'

摘要

For the original article see ibid., vol.MTT-32, no.3, p.256-61 (1984). The commenter has rederived expressions from the work by B. Kim et al. and found errors of algebraically inconsistent expressions even with the appropriate approximations taken into account. Equations 10, 11a, 14, 15, 16 and entries in table 1 are corrected.