A set of monolithic L-band components operating at milliwatt and sub-milliwatt DC power consumptions have been designed and fabricated. A maximum gain/power quotient of 19.1 dB/mW was recorded for a monolithic amplifier at a frequency of 1.25 GHz with a cascade of 2 MMIC amplifiers yielding a total gain of 15.3 dB on a total power consumption of just 800 mu W. This is believed to be the highest gain/power quotient ever reported for a monolithic circuit at L-band. A four-pole voltage controlled filter with low-power amplifier gain stages showed a loss of 1.6 dB with 15% 3-dB bandwidth on a power consumption of 6.75 mW at 1.575 GHz. A subsystem containing the chips was assembled and tested. The ultra-low power consumptions were obtained with a standard foundry process using an enhancement-mode MESFET with a variety of design techniques. Yields obtained on two 4-in GaAs wafers were 96-100%.
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机译:已经设计和制造了一组以毫瓦和亚毫安直流功耗工作的单片L波段组件。单片放大器在1.25 GHz频率下记录的最大增益/功率商为19.1 dB / mW,级联的2个MMIC放大器在仅800μW的总功耗下产生了15.3 dB的总增益。据信,这是有史以来针对L波段单片电路报道的最高增益/功率商。具有低功率放大器增益级的四极压控滤波器在1.575 GHz时的功耗为6.75 mW时,损耗为1.6%,带宽为15%3-dB。组装并测试了包含芯片的子系统。使用具有多种设计技术的增强模式MESFET,通过标准铸造工艺获得超低功耗。在两个4英寸GaAs晶圆上获得的产率为96-100%。
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