Monolithic L-band low-noise amplifiers (LNAs) operating at milliwatt and sub-milliwatt DC power consumptions were designed and fabricated. A maximum gain/power quotient of 19.1 dB/mW was recorded at a frequency of 1.25 GHz with a cascade of two monolithic microwave integrated circuit (MMIC) amplifiers yielding a total gain of 15.3 dB on a total power consumption of just 800 mu W. This is believed to be the highest gain/power quotient ever reported for a monolithic circuit at L-band. The ultralow power consumptions were obtained with a standard foundry process using an enhancement-mode MESFET with a variety of design techniques. Yields obtained on two 4-in GaAs wafers were 96-100%.
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机译：设计和制造了以毫瓦和亚毫安直流功耗工作的单片L波段低噪声放大器（LNA）。在级联的两个单片微波集成电路（MMIC）放大器的级联下，在1.25 GHz的频率下记录的最大增益/功率商为19.1 dB / mW，在仅800μW的总功耗下产生了15.3 dB的总增益。据信，这是有史以来针对L波段单片电路报道的最高增益/功率商。超低功耗是通过采用增强模式MESFET和多种设计技术的标准铸造工艺获得的。在两个4英寸GaAs晶圆上获得的产率为96-100％。
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