Microwave interactions in semiconductor multiple-quantum-well heterostructures utilizing a coplanar-strip geometry device

摘要

A novel device design utilizing a multiple-quantum-well heterostructure conduction channel with an oxide-isolated overlying coplanar-strip transmission line has been constructed. These devices exhibit negative differential conductance in their dc characteristics for current transport in the plane of the quantum-well layers, originating from the change in mobility of the heated electrons within the quantum-well structure. This device design has permitted the observation of nonlinear conduction properties using these multiple-quantum-well heterostructures at microwave frequencies.