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A K-band monolithic oscillator integrated with a buffer amplifier using a device-circuit interaction design concept

机译:使用器件-电路交互设计概念的,集成有缓冲放大器的K波段单片振荡器

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We report on a high power, high efficiency, and small-size monolithic coplanar waveguide oscillator incorporating a single-stage buffer amplifier on the same chip. For the oscillator design, by changing RF current level through the device, the optimum load line was chosen in order to have an oscillation frequency insensitive to the effect of the subsequently connected amplifier, based on a device-circuit interaction concept. The amplifier, on the other hand, which was driven directly by the oscillator, was designed to achieve an overall high power and high efficiency operation. At 21 GHz, the output power of the developed chip recorded 17 dBm with an overall DC-RF efficiency of 22%. By changing the length of a source feedback line, the oscillation frequency was varied from 21 GHz to 26 GHz. For all cases, the output power remained higher than 16 dBm.
机译:我们报告了在同一芯片上集成了单级缓冲放大器的高功率,高效率和小型单片共面波导振荡器。对于振荡器设计,基于器件-电路交互概念,通过改变流经器件的RF电流水平,选择了最佳负载线,以使其振荡频率对随后连接的放大器的影响不敏感。另一方面,放大器是由振荡器直接驱动的,旨在实现整体高功率和高效率的工作。在21 GHz时,已开发芯片的输出功率记录为17 dBm,总DC-RF效率为22%。通过改变源反馈线的长度,振荡频率从21 GHz变为26 GHz。在所有情况下,输出功率均保持高于16 dBm。

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