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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >A 850-GHz waveguide receiver employing a niobium SIS junction fabricated on a 1-/spl mu/m Si/sub 3/N/sub 4/ membrane
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A 850-GHz waveguide receiver employing a niobium SIS junction fabricated on a 1-/spl mu/m Si/sub 3/N/sub 4/ membrane

机译:使用在1- / spl mu / m Si / sub 3 / N / sub 4 /膜上制作的铌SIS结的850 GHz波导接收器

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摘要

We report on a 850-GHz superconducting-insulator-superconducting (SIS) heterodyne receiver employing an RF-tuned niobium tunnel junction with a current density of 14 kA/cm/sup 2/, fabricated on a 1-/spl mu/m Si/sub 3/N/sub 4/ supporting membrane. Since the mixer is designed to be operated well above the superconducting gap frequency of niobium (2/spl Delta//h/spl ap/690 GHz), special care has been taken to minimize niobium transmission-line losses. Both Fourier transform spectrometer (FTS) measurements of the direct detection performance and calculations of the IF output noise with the mixer operating in heterodyne mode, indicate an absorption loss in the niobium film of about 6.8 dB at 822 GHz. These results are in reasonably good agreement with the loss predicted by the Mattis-Bardeen theory in the extreme anomalous limit. From 800 to 830 GHz, we report uncorrected receiver noise temperatures of 518 or 514 K when we use Callen and Welton's law to calculate the input load temperatures. Over the same frequency range, the mixer has a 4-dB conversion loss and 265 K/spl plusmn/10 K noise temperature. At 890 GHz, the sensitivity of the receiver has degraded to 900 K, which is primarily the result of increased niobium film loss in the RF matching network. When the mixer was cooled from 4.2 to 1.9 K, the receiver noise temperature improved about 20% 409-K double sideband (DSB). Approximately half of the receiver noise temperature improvement can be attributed to a lower mixer conversion loss, while the remainder is due to a reduction in the niobium film absorption loss. At 982 GHz, we measured a receiver noise temperature of 1916 K.
机译:我们报告了一个在1 // spl mu / m Si上制造的,采用RF调谐铌隧道结且电流密度为14 kA / cm / sup 2 /的850 GHz超导-绝缘体-超导(SIS)外差接收器/ sub 3 / N / sub 4 /支撑膜。由于混频器设计为在铌的超导能隙频率(2 / spl Delta // h / spl ap / 690 GHz)之上高得多的频率下工作,因此要特别注意以最大程度地减少铌传输线的损耗。混频器以外差模式运行时,直接检测性能的傅里叶变换光谱仪(FTS)测量和IF输出噪声的计算都表明,铌膜在822 GHz处的吸收损耗约为6.8 dB。这些结果与Mattis-Bardeen理论在极端异常极限中所预测的损失相当吻合。在800至830 GHz范围内,当我们使用卡伦和韦尔顿定律计算输入负载温度时,我们报告的未校正接收机噪声温度为518或514K。在相同的频率范围内,混频器具有4 dB的转换损耗和265 K / spl plusmn / 10 K的噪声温度。在890 GHz频率下,接收器的灵敏度已降至900 K,这主要是RF匹配网络中铌薄膜损耗增加的结果。当混频器从4.2 K冷却到1.9 K时,接收器噪声温度提高了409-K双边带(DSB)的20%。接收器噪声温度改善的大约一半可以归因于较低的混频器转换损耗,而其余部分则归因于铌膜吸收损耗的降低。在982 GHz时,我们测得的接收器噪声温度为1916K。

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