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Low-phase-noise low-power IC VCOs for 5-8-GHz wireless applications

机译:适用于5-8 GHz无线应用的低相位噪声低功耗IC VCO

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摘要

A set of fully integrated voltage-controlled oscillators (VCOs) in the 5-8 GHz frequency range has been designed and manufactured in Si bipolar and Si-SiGe-heterojunction-bipolar-transistor technology. A minimum phase noise of -100 dBc/Hz at 100-kHz off carrier was measured for 2-V supply voltage and 16 mW of power consumption. SiGe VCOs give considerably better phase-noise performance than Si bipolar VCOs for the technologies investigated herein, using similar topologies.
机译:已经使用Si双极和Si-SiGe-异质结-双极晶体管技术设计和制造了一组5-8 GHz频率范围内的完全集成压控振荡器(VCO)。对于2V电源电压和16mW的功耗,在100kHz载波下的最小相位噪声为-100dBc / Hz。对于本文研究的技术,SiGe VCO使用相似的拓扑结构比Si双极VCO具有更好的相位噪声性能。

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