Measurement and Modeling Errors in Noise Parameters of Scaled-CMOS Devices

摘要

Noise parameter measurements of submicrometer scaled-CMOS devices are error prone. These errors can propagate to a device model affecting the performance of low-noise amplifiers (LNAs) designed with them. In this paper, measurement errors in noise parameters of submicrometer scaled-CMOS devices are quantified. The sensitivity of different noise parameters to measurement and modeling errors is examined, showing that some parameters (NF_(min), R_(n)) are more immune to such errors than others (G_(opt), B_(opt)). We propose a modeling and design approach (desensitization by R_(n)-optimization) that can greatly alleviate the impact of such errors on the noise figure of LNAs. Measured results from a 90-nm LNA show substantial (>=2.5 dB) improvement in its noise figure as a result of desensitization.