A Highly Linear Low-Noise Amplifier

摘要

A low-noise amplifier (LNA) that achieves high third-order input intercept point (IIP3) at RF frequencies using a nonlinearity cancellation technique is proposed. The circuit tackles the problem of the effect of the second-order nonlinearity on IIP3 at RF frequencies. The circuit functionality is analyzed using Volterra series. The linear LNA was designed and fabricated in a TSMC 0.35-mum CMOS process. An IIP3 of +21 dBm was achieved with a gain of 11.5 dB, noise figure of 2.95 dB, and a power consumption of 9 mA at 2.5 V