Modeling and Characterization of On-Chip Transformers for Silicon RFIC

摘要

A broadband and scalable lumped-element model for silicon on-chip transformers is presented. Model elements are driven from layout and process technology specifications. We provide simple and accurate expressions for evaluating the self inductance and the mutual coupling coefficient. The effects of various layout parameters, including transformer area, number of turns, and turns ratio, on transformer electrical response have been investigated. Model accuracy is demonstrated by comparing simulated and measured $S$ -parameters, minimum insertion loss, quality factor, coils inductance, and magnetic coupling of several transformers with a wide range of configurations.