Integrated RF Interference Suppression Filter Design Using Bond-Wire Inductors

摘要

Design techniques are presented for the realization of high-performance integrated interference suppression filters using bond-wire inductors. A new configuration is proposed for mitigating the impact of mutual coupling between the bond wires. A differential low-noise amplifier with an integrated on-chip passive interference suppression filter is designed at 2.1 GHz in a 0.18-$mu{hbox {m}}$ CMOS process, and achieves a transmit leakage suppression of 10 dB at 190-MHz offset. The differential filter uses metal–insulator–metal capacitors and bond-wire inductors and occupies only 0.22 ${hbox {mm}}^{2}$ . The cascaded system achieves a measured gain of 9.5 dB with a 1.6-dB noise figure and $-{hbox{5 dBm}}$ out-of-band ${rm IIP}_{3}$ and consumes 11 mA from a 2-V supply.