Resistive-Feedback CMOS Low-Noise Amplifiers for Multiband Applications

摘要

Extremely compact resistive-feedback CMOS low-noise amplifiers (LNAs) are presented as a cost-effective alternative to multiple narrowband LNAs using high-$Q$ inductors for multiband wireless applications. Limited linearity and high power consumption of the inductorless resistive-feedback LNAs are analyzed and circuit techniques are proposed to solve these issues. A 12-mW resistive-feedback LNA, based on current-reuse transconductance boosting is presented with a gain of 21 dB and a noise figure (NF) of 2.6 dB at 5 GHz. The LNA achieves an output third-order intercept point (IP3) of 12.3 dBm at 5 GHz by reducing loop-gain rolloff and by improving linearity of individual stages. The active die area of the LNA is only 0.012 mm$^{2}$.