A Wideband Scalable and SPICE-Compatible Model for On-Chip Interconnects Up to 110 GHz

摘要

A fully scalable and SPICE compatible wideband model of on-chip interconnects valid up to 110 GHz is presented in this paper. The series branches of the proposed multisegment model consist of an $RL$ ladder network to capture the skin and proximity effects, as well as the substrate skin effect. Their values are obtained from a technique based on a modified effective loop inductance approach and complex image method. A CG network is used in the shunt branches of the model, which accounts for capacitive coupling through the oxide and substrate loss due to the electrical field, as well as the impact of dummy metal fills. The values of these elements are determined by analytical and semiempirical formulas. The model is validated by a full-wave electromagnetic field solver, as well as measurements. The simulated ${ S}$-parameters of the model agree well with the measured ${ S}$-parameters of on-chip interconnects with different widths and lengths over a wide frequency range from dc up to 110 GHz.