Characterization of GaN HEMT Low-Frequency Dispersion Through a Multiharmonic Measurement System

摘要

In this paper, the experimental characterization of low-frequency dispersion (i.e., long-term memory effects) affecting microwave GaN HEMTs is carried out by adopting a new nonlinear measurement system, which is based on low-frequency multiharmonic signal sources. The proposed setup, which has been fully automated by a control software procedure, enables given source/load device terminations at fundamental and harmonic frequencies to be synthesized. Different experimental results are provided to characterize well-known effects related to low-frequency dispersion (e.g., knee walkout and drain current collapse) and to demonstrate the validity of assumptions commonly adopted for electron device modeling.