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A 2.8-mW Sub-2-dB Noise-Figure Inductorless Wideband CMOS LNA Employing Multiple Feedback

机译:采用多反馈的2.8mW低于2dB噪声系数的无电感宽带CMOS LNA

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摘要

A wideband low-noise amplifier (LNA), which is a key block in the design of broadband receivers for multiband wireless communication standards, is presented in this paper. The LNA is a fully differential common-gate structure. It uses multiple feedback paths, which add degrees of freedom in the choice of the LNA transconductance to reduce the noise figure (NF) and increase the amplification. The proposed LNA avoids the use of bulky inductors that leads to area and cost saving. A prototype is implemented in IBM 90-nm CMOS technology. It covers the frequency range of 100 MHz to 1.77 GHz. The core consumes 2.8 mW from a 2-V supply occupying an area of 0.03 ${hbox {mm}}^{2}$. Measurements show a gain of 23 dB with a 3-dB bandwidth of 1.76 GHz. The minimum NF is 1.85 dB, while the average NF is 2 dB across the whole band. The LNA achieves a return loss greater than 10 dB across the entire band and a third-order input intercept point ${rm IIP}_{3}$ of $-$ 2.85 dBm at the maximum gain frequency.
机译:本文介绍了宽带低噪声放大器(LNA),它是针对多频带无线通信标准的宽带接收器设计中的关键模块。 LNA是全差分共栅结构。它使用多个反馈路径,这增加了LNA跨导选择的自由度,以降低噪声系数(NF)并增加放大倍数。提出的LNA避免了使用笨重的电感器,从而节省了面积并节省了成本。在IBM 90纳米CMOS技术中实现了原型。它涵盖了100 MHz至1.77 GHz的频率范围。内核从2V电源消耗的功率为2.8 mW,占用的面积为0.03 $ {hbox {mm}} ^ {2} $。测量表明,增益为23 dB,而3-dB带宽为1.76 GHz。最小NF为1.85 dB,而整个频带的平均NF为2 dB。在最大增益频率下,LNA在整个频带上实现的回波损耗大于10 dB,并且三阶输入截取点$ {rm IIP} _ {3} $为$-$ 2.85 dBm。

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