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首页> 外文期刊>Microwave Theory and Techniques, IEEE Transactions on >Broadband src='/images/tex/19873.gif' alt='Gm'> -Boosted Differential HBT Doublers With Transformer Balun
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Broadband src='/images/tex/19873.gif' alt='Gm'> -Boosted Differential HBT Doublers With Transformer Balun

机译:宽带 src =“ / images / tex / 19873.gif” alt =“ Gm”> -带变压器不平衡变压器的增强型差分HBT倍增器

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摘要

Broadband monolithic InGaP HBT frequency doublers for $K$-band application have been developed. The designs employ a $Gm$ -boosted differential common-base configuration using either capacitive or transformer-based coupling between base and emitters. To the authors' best knowledge, these are the first frequency doublers utilizing the $Gm$-boosted configuration and the result demonstrate larger bandwidth and higher output power than any previously reported frequency doublers. The design with cross-coupled capacitors presents a fundamental rejection better than 20 dB over a 100% 3-dB bandwidth, extending from 6 to 18 GHz. The transformer-coupled design has about 15-dB fundamental rejection over a slightly narrower bandwidth extending from 7 to 16 GHz. Both doublers have conversion gain peaking at more than $-{hbox {0.8 dB}}$ and output power ${P{rm sat}}> 13~{hbox{dBm}}$ . The designs are also very compact with chip sizes less than ${hbox {0.5 mm}}^{2}$.
机译:已经开发了用于 $ K $ 频段应用的宽带单片InGaP HBT倍频器。这些设计采用 $ Gm $ 增强的差分共基配置,在基极和发射极之间采用电容性或基于变压器的耦合。据作者所知,这是第一个利用 $ Gm $ 增强配置的倍频器,结果显示出更大的倍频。带宽和更高的输出功率比以前报告的任何倍频器高。交叉耦合电容器的设计在100%3 dB带宽(从6到18 GHz)范围内提供了优于20 dB的基本抑制性能。变压器耦合的设计在从7 GHz到16 GHz的稍窄带宽上具有约15 dB的基本抑制。两个倍频器的转换增益峰值均超过 $-{hbox {0.8 dB}} $ ,而输出功率 $ {P {rm sat}}> 13〜{hbox {dBm}} $ 。设计也非常紧凑,芯片尺寸小于 $ {hbox {0.5 mm}} ^ {2} $

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