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首页> 外文期刊>Microwave Theory and Techniques, IEEE Transactions on >Low-Power Very Low-Noise Cryogenic SiGe IF Amplifiers for Terahertz Mixer Receivers
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Low-Power Very Low-Noise Cryogenic SiGe IF Amplifiers for Terahertz Mixer Receivers

机译:用于太赫兹混频器接收器的低功耗,超低噪声低温SiGe IF放大器

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摘要

State-of-the-art radio astronomy terahertz receivers utilize clusters of super-conducting mixers with cryogenic IF amplifiers. The critical parameters of the IF amplifiers are noise temperature, bandwidth, power consumption, input return loss, and physical size. This paper presents test data on three approaches to the IF amplifier; two are silicon–germanium (SiGe) monolithic microwave integrated circuit designs and the third is a discrete SiGe transistor miniature module. The amplifiers provide noise temperatures in the range of 5–15 K, from 1 to 6 GHz, at power consumptions as low as 2 mW.
机译:最先进的射电天文太赫兹接收器利用具有超低温IF放大器的超导混频器集群。 IF放大器的关键参数是噪声温度,带宽,功耗,输入回波损耗和物理尺寸。本文介绍了三种中频放大器方法的测试数据。第二个是硅锗单片微波集成电路设计,第三个是分立的SiGe晶体管微型模块。放大器在1至6 GHz的范围内提供5-15 K范围内的噪声温度,功耗低至2 mW。

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