Ultrafast Low-Loss 42–70 GHz Differential SPDT Switch in 0.35 m SiGe Technology

摘要

This paper presents an ultrafast wideband low-loss single-pole double-throw (SPDT) differential switch in 0.35 $mu$ m SiGe bipolar technology. The proposed topology adopting current-steering technique results in a total measured switching time of 75 ps , which suggests a maximum switching rate of 13 Gb/s, the fastest ever reported at V-band. In addition, the switch exhibits an insertion loss lower than 1.25 dB and an isolation higher than 18 dB from 42 GHz to 70 GHz.