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40–70 GHz 13 Gbps 1-dB loss SPST and SPDT differential switches in 0.35 μm SiGe technology

机译:采用0.35μmSiGe技术的40–70 GHz 13 Gbps 1-dB损耗SPST和SPDT差分开关

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This paper presents the design and characterization of ultrafast wideband low-loss single-pole single-throw (SPST) and single-pole double-throw (SPDT) differential switches. The SPDT switch exhibits insertion loss of lower than 1.25 dB from 42 to 70 GHz and isolation of better than 20 dB from 40 to 65 GHz. Similar low-loss and broadband characteristics are also observed from the measured SPST switch. The proposed switch topologies adopting current-steering technique and implemented in 0.35 μm SiGe bipolar technology result in a switching time of only 75 ps. This suggests a maximum switching speed of 13 Gbps, the fastest ever reported at V-band.
机译:本文介绍了超快宽带低损耗单刀单掷(SPST)和单刀双掷(SPDT)差分开关的设计和特性。 SPDT开关在42至70 GHz频率范围内的插入损耗低于1.25 dB,在40至65 GHz频率范围内的隔离度高于20 dB。从测得的SPST开关还可观察到类似的低损耗和宽带特性。拟议的采用电流控制技术并以0.35μmSiGe双极技术实现的开关拓扑结构的开关时间仅为75 ps。这表明最大切换速度为13 Gbps,这是有史以来V波段最快的速度。

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