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机译:LO链(×12)集成了190-GHz低功耗SiGe接收器,具有49 dB转换增益和171 MW DC功耗
Tech Univ Dresden Chair Electron Devices & Integrated Circuits CEDI D-01069 Dresden Germany;
Tech Univ Dresden Chair Electron Devices & Integrated Circuits CEDI D-01069 Dresden Germany|Infineon Technol AG D-85579 Neubiberg Germany;
Tech Univ Dresden Chair Electron Devices & Integrated Circuits CEDI D-01069 Dresden Germany;
Tech Univ Dresden Chair Electron Devices & Integrated Circuits CEDI D-01069 Dresden Germany;
Tech Univ Dresden Chair Electron Devices & Integrated Circuits CEDI D-01069 Dresden Germany|MPI AST Div D-302 Dresden Germany|Ctr Phys Sci & Technol Semicond Phys Inst LT-10257 Vilnius Lithuania|Baltic Inst Adv Technol LT-01403 Vilnius Lithuania;
Tech Univ Dresden Chair Electron Devices & Integrated Circuits CEDI D-01069 Dresden Germany;
Low-noise amplifier (LNA); low-power; millimeter (mm)-wave (G-band); mixer; multiplier; receiver; saturation; silicon-germanium heterojunction bipolar transistor (SiGe HBT);
机译:低功耗SiGe BiCMOS 190 GHz接收器,具有47dB的转换增益和11dB的噪声系数,适用于超大带宽应用
机译:具有0.13的集成LO驱动器的低功率宽带200 GHz下变频混频器
机译:具有片上天线的数据速率高达50 Gbit / s的低功耗SiGe BiCMOS 190 GHz收发器芯片组
机译:低功耗SiGe BiCMOS 190 GHz接收器,具有47 dB的转换增益和11 dB的噪声系数,适用于超大带宽应用
机译:用于高频低功率DC-DC转换器的增益可重新配置的电流检测电路。
机译:对于高频超声波传感器和低功耗手持接收机综合前置放大器的开发
机译:低功耗CMOS可编程增益放大器,具有直接转换接收器的DC偏移消除