Micromachined Silicon-Core Substrate-Integrated Waveguides at 220–330 GHz

摘要

In this article, we present a new technology platform for creating compact and loss-efficient wafer-scale integrated micromachined substrate-integrated waveguides with silicon-core (Si-SIWs) for the 230-330-GHz frequency range. The silicon dielectric core enables highly integrated sub- millimeter-wave systems, since it allows for downscaling the waveguide's cross section by a factor of 11.6, and the volume of components by a factor of 39.3, as compared to an air-filled waveguide. Moreover, geometrical control during fabrication of this type of waveguides is significantly better as compared to micromachined hollow waveguides. The measured waveguide's insertion loss (IL) is 0.43 dB/mm at 330 GHz (0.14 dB/lambda(g), normalized to the guided wavelength). A low-loss ultrawideband coplanar-waveguide (CPW) transition is implemented to enable direct measurements of devices and circuits in this waveguide platform, and this is also the very first CPW-to-SIW transition in this frequency range. The measured IL of the transition is better than 0.5 dB (average 0.43 dB above 250 GHz), which is lower than for previously reported CPW-to-SIW transitions even at 3 times lower frequencies; the return loss is better than 14 dB for 75% of the band. As devices examples implemented in this platform, a filter and H-plane waveguide bends are shown. The waveguides and the devices are manufactured by deep-silicon etching using a cost-efficient two-mask micromachining process.