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A Wideband All-Digital CMOS RF Transmitter on HDI Interposers With High Power and Efficiency

机译:HDI插入器上的宽带全数字CMOS RF发射器,具有高功率和效率

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摘要

This paper demonstrates a wideband CMOS all-digital polar transmitter with flip-chip connection to three high-density-interconnection PCB interposers. The interposers are designed to extract power from a CMOS open-drain inverse Class-D power amplifier core. For a wide frequency range from 0.7 to 3.5 GHz, continuous-wave output power higher than 25.5 dBm and drain efficiency (DE) above 40% are demonstrated. The low-band package achieves a peak power of 29.2 dBm at 1.1 GHz with DE of 60%, the mid-band package outputs 28.8 dBm at 1.5 GHz with DE of 56%, and the high-band package generates 26 dBm at 3 GHz with DE of 49%. The amplitude modulation (AM) is achieved by digitally modulating the switch conductance of the inverse Class-D core, and the on-chip phase modulation is achieved by digitally weighing the in-phase and quadrature bias currents in the IQ mixer. Detailed modulation tests, involving 64 quadrature amplitude modulation (QAM) and 20-MHz WLAN and LTE signals, exhibit excellent power and efficiency at 0.6, 1.2, 1.8, 2.4, 3, and 3.6 GHz. The associated specifications on spectral masks and error vector magnitudes are satisfied.
机译:本文演示了一种宽带CMOS全数字极性发射器,该发射器具有倒装芯片连接到三个高密度互连PCB插入器的功能。插入器设计用于从CMOS开漏反D类功率放大器内核中提取功率。在0.7至3.5 GHz的宽频率范围内,已证明连续波输出功率高于25.5 dBm,漏极效率(DE)高于40%。低频带封装在1.1 GHz时的峰值功率达到29.2 dBm,DE为60%;中频带封装在1.5 GHz时输出28.8 dBm,DE为56%;高频带封装在3 GHz时产生26 dBm。 DE为49%。幅度调制(AM)是通过数字调制逆D类内核的开关电导来实现的,而片上相位调制是通过数字加权IQ混频器中的同相和正交偏置电流来实现的。详细的调制测试涉及64个正交幅度调制(QAM)以及20-MHz WLAN和LTE信号,在0.6、1.2、1.8、2.4、3和3.6 GHz频率下具有出色的功率和效率。满足有关光谱掩模和误差矢量幅度的相关规范。

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