Optimal Definition of Class F for Realistic Transistor Models

摘要

An optimal three-harmonic definition of class F at the intrinsic level is presented for realistic transistor models exhibiting IV characteristics with a nonzero knee voltage. This updated class-F definition is needed for use with the recently reported embedding device model, which predicts in a single harmonic balance simulation the voltage and current waveforms required at the package reference planes to sustain an intrinsic mode of operation. Optimal class-F operation is obtained by setting to infinite the third-harmonic output impedance of the transistor IV characteristics instead of using an open load for the third-harmonic termination. This is achieved by fine tuning the class-F quasi-rectangular drain voltage waveform. The required third-harmonic component of the drain voltage in the optimal class F is then found to be generated by the lossless inductive termination of the third-harmonic component of the drain displacement current arising from the nonlinear drain-to-source capacitance. The proposed class-F definition is verified for a gallium nitride (GaN) high electron mobility transistor using third-harmonic load-pull simulations with a realistic GaN transistor model. The optimal third-harmonic load termination predicted using the class-F definition is found to be in full agreement with the one obtained from the drain efficiency contour plots. A close agreement is also obtained for the predicted and measured optimal third-harmonic load termination, bringing experimental support for the proposed class-F definition.