Corrections to “Linear Analysis of High-Frequency Field-Effect Transistors Using the CN-FDTD Method”

摘要

In the above-cited papern[1]n, the Crank–Nicolson finite-difference time-domain method is used for the analysis of a high-frequency field-effect transistor (FET). However, two references are missed. In addition, there are some errors in (6b),nFig. 2n, andnTable In. The reference of Figs. 1 andn2nisn[2]n. The reference ofnTable Inisn[3]n. In (6b),n$L_{mathrm {dd}}$n,n$L_{mathrm {gg}}$n,n$L_{mathrm {ss}}$n,n$M_{mathrm {gd}}$n, andn$G_{m}$nshould be, respectively,n$L_{mathrm {d}}$n,n$L_{mathrm {g}}$n,n$L_{mathrm {s}}$n,n$M_{mathrm {dg}}$n, andn$g_{m}$n. The corrected version ofnFig. 2nis depicted here, wherein the designations are consistent with the present correction. The corrected table is also reported here, subsequently, wherein the values are valid when the transistor is biased atn$V_{mathrm {ds}} = 3$nV andn$I_{mathrm {ds}} = 10$nmA.