Magnetization Reversal Technique of DyTbFeCo Films at Magnetic Field as Low as 1/6 of Coercivity Using a Stress-Induced Magnetic Anisotropy

摘要

A method to cause magnetization reversal in rare earth-transition metal (RE-TM) films at low magnetic field for perpendicular magnetic random access memory (MRAM) was demonstrated. The magnetic anisotropy was changed from perpendicular to in-plane in DyFeCo and TbDyFeCo films while the mechanical tensile stress is applied to the films. It is succeeded to cause magnetization reversal at low magnetic field as low as 1/6 of original coercivity of the film