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Unconventional Exchange Bias and Multiferroics

机译:非常规汇率偏差和多铁性

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Exchange bias is conventionally induced between a ferromagnet and an antiferromagnet where the Curie temperature $(T_{C})$ considerably exceeds the NÉel temperature $(T_{N})$. Under these circumstances, cooling the bilayer in sufficient field to saturate the ferromagnet is sufficient to induce a finite bias below the blocking temperature $(T_{B})$ which is close to $T _{N}$. However, there are many systems of technological interest in which $T _{C}$ is not significantly greater than $T _{N}$ or in which it is not possible to field-cool the bilayer through $T _{N}$; a highly relevant example is that of systems incorporating the multiferroic antiferromagnet BiFeO$_{3}$which has a $T _{N}$ above the temperature at which interfacial reactions appear to occur with conventional ferromagnets. This paper reports work on several systems which show unconventional bias, including detailed measurements of FeMn/CuNi bilayers in which it is demonstrated that bias can be induced despite $T_{C} = T_{N}$. The reason for this is that, at least for thin antiferromagnet layers, there are always likely to be regions of the interface in which the interfacial coupling energy exceeds the anisotropy energy of the antiferromagnet. This means that field-cooling the bilayer enables partial micromagnetic reordering of the antiferromagnet and provided that reversal of the ferromagnet during measurement at sufficiently low temperatures (i.e., below $T_{B}$) cannot remove this then a small but permanent bias is induced. We have previously shown that this can be described in terms of an activation energy model which predicts the correct form of the dependence of bias on antiferromagnet thickness and temperature. This result is vital in understanding the problems associated with attempts to apply the high temperature antiferromagnet multiferroic BiFeO$_{3}$ in exchange bias systems. Here, a change in the electrical polarization of the antiferromagnet is expected to lead to a corresponding change in the micromagnetic order and hence a change in the exchange interaction. However, this can only lead to the goal of an electrically-controllable exchange bias if the bias can be established in the first place, and the energy changes induced by the electrical reversal exceed the exchange energy at the interface. This paper will examine the limitations which will need to be overcome for successful application of this effect.
机译:传统上,在居里温度$(T_ {C})$大大超过Néel温度$(T_ {N})$的情况下,在铁磁体和反铁磁体之间引起交换偏压。在这些情况下,在足够强的磁场中冷却双层以使铁磁体饱和就足以在低于接近于T $ {N} $的阻断温度$(T_ {B})$之下引起有限的偏置。但是,在许多技术关注的系统中,$ T _ {C} $不会显着大于$ T _ {N} $,或者无法通过$ T _ {N}来对双层进行现场冷却$;一个高度相关的示例是包含多铁性反铁磁体BiFeO $ _ {3} $的系统,该系统的温度比常规铁磁体出现界面反应时的温度高出T $ {N} $。本文报道了在几种显示非常规偏差的系统上的工作,包括对FeMn / CuNi双层的详细测量,结果表明尽管$ T_ {C} = T_ {N} $仍可引起偏差。其原因在于,至少对于薄的反铁磁体层,总是可能存在界面的界面耦合能超过反铁磁体的各向异性能的区域。这意味着对双层进行场致冷可以实现反铁磁体的部分微磁重排序,并且前提是在足够低的温度(即低于$ T_ {B} $)下进行测量期间铁磁体的反转不能消除该磁场,那么会产生一个很小但永久的偏置。先前我们已经表明,这可以用激活能模型来描述,该模型可以预测反铁磁体厚度和温度的偏倚相关性的正确形式。该结果对于理解与尝试将高温反铁磁体多铁BiFeO __ {3} $用于交换偏置系统相关的问题至关重要。在此,反铁磁体的电极化的改变被期望导致微磁阶的相应改变,并因此导致交换相互作用的改变。但是,如果只能首先建立偏压,并且电反向引起的能量变化超过界面处的交换能量,那么这只会导致实现电控交换偏压的目标。本文将探讨成功应用此效果需要克服的局限性。

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