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首页> 外文期刊>Magnetics, IEEE Transactions on >Oxidation and Annealing Process: Morphological Change and Nanocontact MR in Spin Valves With FeCo–AlO$_{x}$ NOL Spacer
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Oxidation and Annealing Process: Morphological Change and Nanocontact MR in Spin Valves With FeCo–AlO$_{x}$ NOL Spacer

机译:氧化和退火过程:FeCo–AlO自旋阀中的形态变化和纳米接触MR <分子式> =“ inline”> $ _ {x} $ NOL垫片

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摘要

We studied the formation mechanism of ferromagnetic nanocontacts (NCs) around 1–2 nm in diameter in thin AlO $_{x}$ nano-oxide layer (NOL) through in situ conductive atomic force microscopy (c-AFM), which is the only method suitable for measuring morphological changes in features this small. Spin valves (SVs) with Fe $_{0.5}$Co $_{0.5}$NCs in AlO $_{x}$ NOL fabricated by ion-assisted-oxidation (IAO) irradiated onto 1.3-nm-thick Al had nanocontact magnetoresistance (NCMR) characteristics with the MR ratio of 5% for 1 $Omega mu$m $^{2}$. According to measurements with c-AFM, these NCs were mostly located at the valleys between the AlO$_{rm x}$ grains or the edge of the grain. In other words, NCs were formed in the oxidation and cohesion process of Al by the IAO. Moreover, we found that the high-temperature annealing process improved the MR ratio to around 10% for 0.5 $Omega mu$m $^{2}$. The high-temperature annealing process may involve the AlO$_{x}$ morphological change and have led the Al atoms in NCs to migrate to AlO$_{x}$ by combining with oxygen as impurities. Then, the morphological changes and migration of Al caused NCs to be the low resistivity and the short length.
机译:我们研究了在薄AlO中直径约为1-2 nm的铁磁纳米接触(NCs)的形成机理 $ _ {x} $ 通过原位导电原子力显微镜(c-AFM)获得的纳米氧化物层(NOL),这是适合于测量如此小的特征形态变化的唯一方法。带有Fe $ _ {0.5} $ Co $ _ {0.5} $ NCs $ _ {x} $ 离子辅助氧化(IAO)辐照到厚度为1.3 nm的铝上制成的NOL具有纳米接触磁阻(NCMR)特性,对于1种,其MR率为5%。<分子式> “> $ Omega mu $ m $ ^ {2} $ 。根据使用c-AFM的测量,这些NCs大多位于AlO <公式> =“ inline”> $ _ {rm x} $ 之间的谷点。谷物或谷物的边缘。换句话说,通过IAO在Al的氧化和内聚过程中形成了NCs。此外,我们发现高温退火工艺可将0.5 $ Omega mu $ m的MR比提高到10%左右。 $ ^ {2} $ 。高温退火过程可能涉及AlO $ _ {x} $ 的形态变化,并导致了NC中的Al原子通过与作为杂质的氧结合而迁移到AlO $ _ {x} $ 。然后,Al的形态变化和迁移导致NCs为低电阻率和短长度。

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