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Superconducting properties of TaN and VN films

机译:TaN和VN薄膜的超导性能

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Thin superconducting TaN and VN films produced by reactive cathode sputtering have been investigated. Superconducting-phase-transition smearing in applied field seems to be due to spatial fluctuations of the electron diffusion coefficient as well as dimensional crossover of dynamical superconducting order parameter fluctuations. Flux pinning occurs at grain boundaries by electron scattering mechanism. Transition to a dissipative state is induced by flux line separation from the pins but not by flux line lattice plastic shear.
机译:已经研究了通过反应性阴极溅射制备的超导TaN和VN薄膜。应用场中的超导相变拖尾现象似乎是由于电子扩散系数的空间波动以及动态超导阶跃参数波动的尺寸交叉所致。通量钉扎通过电子散射机制发生在晶界处。过渡到耗散状态是由与销钉分离的磁通线引起的,而不是由磁通线格塑性剪切引起的。

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