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The Effect of DC Bias Current on Domain Wall Resonance Property of Thin-Film Magnetoimpedance Element

机译:DC偏置电流对薄膜磁阻元件的畴壁共振特性的影响

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We investigated the influence of the dc bias current on the domain wall resonance of thin-film magnetoimpedance (MI) elements. When the intensity of dc bias current is relatively low (0–0.5 mA), the impedance profile shows a domain wall resonance behavior, which shows another peak and rapid drop of inductance in the low-frequency region. The peak height and resonance frequency do not depend on the dc bias current in this range. On the other hand, though the impedance profiles still show domain wall resonance, the behavior strongly depends on the dc bias current; the impedance peak height and amount of inductance drop decrease as well as the resonance frequency shifts to lower frequency with increasing dc bias current. The domain wall resonance completely disappears at 2 mA in this study. On the static field dependence of impedance with dc bias current, the profile shows asymmetric with respect to the $Z$ -axis, which is the same as the property observed in higher frequency. The slight increment of impedance and inductance changes was admitted around the resonance frequency.
机译:我们研究了DC偏置电流对薄膜磁阻(MI)元件的畴壁共振的影响。当DC偏置电流的强度相对较低(0-0.5 mA)时,阻抗轮廓示出了畴壁谐振行为,其示出了低频区域中的另一峰值和电感的快速下降。峰值高度和谐振频率不依赖于该范围内的直流偏置电流。另一方面,虽然阻抗轮廓仍然显示域壁谐振,但行为强烈取决于直流偏置电流;电感降低的阻抗峰值高度和电感量的量和谐振频率随着DC偏置电流的增加而变化到较低频率。在本研究中,畴壁共振完全消失了2 mA。在与直流偏置电流的阻抗的静态场依赖性上,配置文件相对于<内联公式XMLNS的不对称:MML =“http://www.w3.org/1998/math/mathml”xmlns:xlink =“ http://www.w3.org/1999/xlink“> $ z $ -axis,它与属性相同观察到较高频率。围绕共振频率承认阻抗和电感变化的轻微增量。

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